|
 |
||
 |
Power Supply Voltage : 1.7V ~ 1.9V | |
|
Super Low stand-by current | |
|
Multiplexed address and data bus | |
|
Three state outputs | |
|
BYTE control for selection of Word/Byte | |
|
RMS (Reduced Memory Size ) | |
|
Auto TCSR (Temperature Compensated Self Refresh) | |
 |
||
|
Dual voltage
rails for optimum power & performance - Vcc : 1.7V to 1.95V / 2.3V to 2.7V / 2.7v to 3.3V - Vccq : 1.7V to 1.95V / 2.3V to 2.7V / 2.7v to 3.3V |
|
|
Page Mode | |
|
Super Low stand-by current | |
|
PASR (Partial array Self Refresh) | |
|
TCSR (Temperature Compensated Self Refresh) | |
|
Deep power down mode | |
 |
||
|
Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V | |
|
MRS cycle with address
key programs - CAS latency (1, 2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave) |
|
|
EMRS cycle with address key programs. | |
|
Low Power special
Features - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Programmable Output Drive Strength) - Deep Power Down Mode |
|
| RAMSWAY work within your demanding
features to design and manufacture a customized memory product solution
that meets your special requirements. RAMSWAY has a customized memory solution available today |
 |
 |
 |
